SEMES
KOR
Korea's semiconductor history, spectacular
journey of SEMES from the past to the present
1990’
1993
Beginning of SEMES
A corporation under the name of Korea DNS Co., Ltd. was established with a capital of 1 billion won. In April of the following year, the first plant in Cheonan was constructed, and the first equipment WET STATION was launched, the very beginning of the first year of SEMES.
Development of 256MB DRAM
1996
Development of 1GB DRAM
1998
Developed K-WET(300mm WET STATION)
The first 300mm wafer processing equipment, K-WET was developed.
Development of 128 NAND
1999
Established the second factory
After completing the construction of the second plant in Cheonan, we unleash a bigger dream.
2000’
2000
Received the award of USD 10 million export tower on the 37th Trade Day
We achieve an export of USD 10 million for the first time and won the Export Tower Award.
Introduction of 300mm Wafer Fab
2001
Developed and launched a localized version of 300mm Photo Track K-SPIN12
We succeed in localizing 300mm Photo Track equipment.
Mass production of 512MB NAND
2002
Developed and launched a localized version of 300mm SWP3004 single wafer cleaner
We succeed in localizint 300mm single wafer cleaner
Development of 90 nano grade 2GB NAND
2004
Development of 60 nano grade 8GB NAND
2005
Changed the company name
from KDNS Co., Ltd. to SEMES Co., Ltd.
The Company name Korea DNS changes to SEMES Co., Ltd., the current name of us.
Development of DDR3 SDRAM Development of 50 nano grade 16GB NAND
2006
Launched 300mm single wafer cleaner (IRIS)
The launch of IRIS, the 300mm single wafer cleaner achieves a lot of records.
Development of 50 nano grade 1GB DRAM
Development of 80 nano grade 512MB DRAM
Development of 40 nano grade 32GB NAND
Development of 16-chip MCP(Multi Chip Package)
2007
Moved to a larger office in Cheonan
With the new building and expanding a new plant in Cheonan, we step into a bigger world.
Mass production of 60 nano grade 1GB DRAM
2008
Launched LOZIX equipment
We develop new Photo Track equipment, LOZIX and launch it.
2009
Mass production of 40 nano grade 2GB DDR3 DRAM
Mass production of 50 nano grade 1GB MDDR DRAM
2010’
2010
Mass production of 30 nano grade 2GB DDR3 DRAM
Mass production of 40 nano grade 1GB MDDR DRAM
2011
Achieved the USD 100 million Export Tower and received the Minister Prize by Ministry of Knowledge Economy
We achieve an export of USD 100 million and won the Export Tower Award.
Mass production of 20 nano grade 2GB DDR3 DRAM
Mass production of 40 nano grade 4GB LPDDR2 DRAM
2012
Mass production of 20 nano grade 4GB DDR3 DRAM
Mass production of 40 nano grade 4GB LPDDR3 DRAM
2013
Merged with SECRON Co., Ltd. and
GES Co., Ltd.
We secured our foothold for a bigger leap forward by merging SECRON Co., Ltd. and GES Co., Ltd.
Mass production of 20 nano grade 6GB LPDDR3 DRAM
Mass production of 20-chip 128GB 3D NANDM
2014
The world first launch of <SUPER CRYSTAL> single wafer cleaner for supercritical process
We are launching the world's first supercritical cleaning facility, <SUPER CRYSTAL>.
Mass production of 20 nano grade 8GB DDR4 DRAM
Mass production of 20 nano grade 8GB LPDDR4 DRAM
Mass production of 32-chip 128GB 3D NAND
Received the 400 million USD Export Tower
Only 3 years after exporting USD100 million, we achieve $400 million in exports.
2015
Installed 1,000 units of single wafer cleaner
Installed 1,000 units of single wafer cleaner
Mass production of 48-chip 3D NAND
2016
Opened a research institute in Hwasung
By opening and operating a research institute in Hwaseong, Gyeonggi-do, we invest in R&D in earnest.
Mass production of 64-chip 3D NAND Mass production of 1st generation 10 nano grade 8GB DDR4 DRAM
2017
Mass production of 2nd generation 10 nano grade 8GB DDR4 DRAM
2018
Received the 'Best of the Best’ for Red Dot design (Prober SEMPRO)
Our design capabilites are widely recognaized by winning an award at the Reddot Design Awards, the global design award.
Mass production of 92-chip 3D NAND
2019
Launched Poly etcher <MICHELAN C4>
Mass production of 3rd generation 10 nano grade 8GB DDR4 DRAM
Mass production of 2nd generation 10 nano grade 12GB LPDDR4 DRAM
128-chip 3D NAND
2020’
Global Top-Tier ,SEMES
2020
Launched Prober <SEMPRO Prime>,
Test Handler <STH-5800>
The product lineup is further expanded through the development of next-generation Prober and Handler.
Mass production of 2nd generation 10 nano grade 64GB DDR5 DRAM
Mass production of 3rd generation 10 nano grade 12GB LPDDR5 DRAM
Mass production of 176-chip 3D NAND
2021
Announcement of 512GB DDR5 DRAM applied with HKMG process
NOW
And today,
even at this moment
we will continue to challenge and
never stop as we always have.
We Make Answers
